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ORCIDBhawani Shankar
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2020 – today
- 2025
[c9]Kamal Varadarajan, Alexei Ankoudinov, Robert Yang, Alexey Kudymov, Bhawani Shankar, Karthick Murukesan
, Sorin Georgescu:
Reliability Qualification of 1250V Lateral GaN HEMTs for High Reliability Industrial Applications (Invited). IRPS 2025: 3- 2024
- [c8]Rafael Perez Martinez, Masaya Iwamoto, Ana M. Banzer Morgado, Yiao Li, Roberto Tinti, Jianjun Xu, Chad Gillease, Steven Cochran, Bhawani Shankar, Else-Marie Schmidt, Zijian Song, Natalie Wagner, Philipp Pahl, Alexander Petr, Srabanti Chowdhury:
A Hybrid Physical ASM-HEMT Model Using a Neural Network-Based Methodology. BCICTS 2024: 38-41 - 2022
- [c7]Bhawani Shankar, Ke Zeng, Brendan Gunning, Rafael Perez Martinez, Chuanzhe Meng, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar, Srabanti Chowdhury:
Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress. DRC 2022: 1-2 - [c6]Bhawani Shankar, Zhengliang Bian, Ke Zeng, Chuanzhe Meng, Rafael Perez Martinez, Srabanti Chowdhury, Brendan Gunning, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar:
Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization. IRPS 2022: 2
2010 – 2019
- 2019
- [c5]Sayak Dutta Gupta, Vipin Joshi, Bhawani Shankar, Swati Shikha, Srinivasan Raghavan, Mayank Shrivastava:
UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities. IRPS 2019: 1-5 - 2018
- [c4]Bhawani Shankar, Ankit Soni, Sayak Dutta Gupta, Mayank Shrivastava:
Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs. IRPS 2018: 4 - [c3]Bhawani Shankar, Ankit Soni, Sayak Dutta Gupta, R. Sengupta, Heena Khand, N. Mohan, Srinivasan Raghavan, Mayank Shrivastava:
On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs. IRPS 2018: 4 - 2017
- [c2]Bhawani Shankar, Dakala Jayachandra, Kalyan Kumar Hati:
Face Pose Estimation From Rigid Face Landmarks For Driver Monitoring Systems. Autonomous Vehicles and Machines 2017: 83-88 - [c1]Bhawani Shankar, Ankit Soni, Manikant Singh, Rohith Soman, K. N. Bhat, Srinivasan Raghavan, Navakanta Bhat, Mayank Shrivastava:
ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis. VLSID 2017: 361-365
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