"Structure for characterization of MOS transistors in 28FD-SOI technology."

Jérémy Bonnet et al. (2024)

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DOI: 10.1109/DTTIS62212.2024.10780402

access: closed

type: Conference or Workshop Paper

metadata version: 2025-01-16

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Jérémy Bonnet, Stéphane Meillére, Fabien Granoux, Wenceslas Rahajandraibe:
Structure for characterization of MOS transistors in 28FD-SOI technology. DTTIS 2024: 1-5

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