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"Impact of device geometry and doping strategy on linearity and RF ..."
L. Yang et al. (2004)
- L. Yang, Asen Asenov, Jeremy R. Watling, M. Boriçi, John R. Barker, Scott Roy, K. Elgaid, Iain Thayne, T. Hackbarth:

Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectron. Reliab. 44(7): 1101-1107 (2004)

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