"Effects of combined NO and forming gas annealing on interfacial properties ..."

Zhaoyang Peng et al. (2016)

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DOI: 10.1016/J.MICROREL.2015.11.022

access: closed

type: Journal Article

metadata version: 2020-02-22

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Zhaoyang Peng, Yiyu Wang, Huajun Shen, Chengzhan Li, Jia Wu, Yun Bai, Kean Liu, Xinyu Liu:
Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures. Microelectron. Reliab. 58: 192-196 (2016)

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