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"Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow ..."
Chao Peng et al. (2014)
- Chao Peng

, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi:
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation. Microelectron. Reliab. 54(4): 730-737 (2014)

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