"Silicon nitride etch characteristics in SF6/O2 and ..."

I. J. Kim et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.07.013

access: closed

type: Journal Article

metadata version: 2020-10-28

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I. J. Kim, H. K. Moon, J. H. Lee, Nae-Eung Lee, J. W. Jung, S. H. Cho:
Silicon nitride etch characteristics in SF₆/O₂ and C₃F₆O/O₂ plasmas and evaluation of their global warming effects. Microelectron. Reliab. 52(12): 2970-2974 (2012)

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