"SiO2 tunneling and Si3N4/HfO2 ..."

Hsin-Kai Fang et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.02.021

access: closed

type: Journal Article

metadata version: 2020-02-22

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Hsin-Kai Fang, Kuei-Shu Chang-Liao, Chia-Hsin Cheng, Po-Yao Lin, Wen-Hsien Huang, Chang-Hong Shen, Jia-Min Shieh:
SiO₂ tunneling and Si₃N₄/HfO₂ trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devices. Microelectron. Reliab. 91: 319-322 (2018)

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