"Total ionizing dose and single event effects of 1 Mb ..."

Jinshun Bi et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.07.017

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type: Journal Article

metadata version: 2025-01-19

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Jinshun Bi, Yuan Duan, Kai Xi, Bo Li:
Total ionizing dose and single event effects of 1 Mb HfO₂-based resistive-random-access memory. Microelectron. Reliab. 88-90: 891-897 (2018)

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