"Threshold voltage peculiarities and bias temperature instabilities of SiC ..."

Thomas Aichinger, Gerald Rescher, Gregor Pobegen (2018)

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DOI: 10.1016/J.MICROREL.2017.11.020

access: closed

type: Journal Article

metadata version: 2021-10-14

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Thomas Aichinger, Gerald Rescher, Gregor Pobegen:
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectron. Reliab. 80: 68-78 (2018)

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