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"SiC trench IGBT with n-barrier layer to enhance conductivity modulation."
Ruixue Mai et al. (2025)
- Ruixue Mai, Xiaoli Tian, Yu Yang, Wei Wei, Chengzhan Li, Yun Bai, Chengyue Yang, Kaikai Wang, Yidan Tang:

SiC trench IGBT with n-barrier layer to enhance conductivity modulation. Microelectron. J. 166: 106919 (2025)

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