"Novel SenseFET structure for VDMOS with adopting body reverse bias ..."

Tian Han et al. (2023)

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DOI: 10.1016/J.MEJO.2022.105687

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type: Journal Article

metadata version: 2023-04-16

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Tian Han, Fazhan Zhao, Xiaowu Cai, Liang Shan, Yun Tang, Bo Li:
Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio. Microelectron. J. 134: 105687 (2023)

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