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"Read/write margin enhanced 10T SRAM for low voltage application."
Chunyu Peng et al. (2016)
- Chunyu Peng, Lijun Guan, Wenjuan Lu, Xiulong Wu, Xincun Ji:

Read/write margin enhanced 10T SRAM for low voltage application. IEICE Electron. Express 13(12): 20160382 (2016)

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