"On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET."

Khandker Akif Aabrar et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631312

access: closed

type: Conference or Workshop Paper

metadata version: 2025-03-03

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Khandker Akif Aabrar, Hyeonwoo Park, Sharadindu Gopal Kirtania, Eknath Sarkar, Md Abdullah Al Mamun, Sunbin Deng, Chengyang Zhang, Gilbert B. Rayner, Kyeongjae Cho, Suman Datta:
On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET. VLSI Technology and Circuits 2024: 1-2

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