"GaAs-SiGe Based Novel Device Structure of Doping Less Tunnel FET."

Shivendra Yadav et al. (2019)

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DOI: 10.1007/978-981-32-9767-8_57

access: closed

type: Conference or Workshop Paper

metadata version: 2019-09-05

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  dblp key:
  - conf/vdat/YadavRSB19
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Shivendra Yadav, Chithraja Rajan, Dheeraj Sharma, Sanjay Balotiya:
GaAs-SiGe Based Novel Device Structure of Doping Less Tunnel FET. VDAT 2019: 694-701

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