"Innovative Circuit Level Methodology for FinFET based Low-Power 6T SRAM ..."

Vishal Gupta et al. (2024)

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DOI: 10.1109/VDAT63601.2024.10705674

access: closed

type: Conference or Workshop Paper

metadata version: 2025-03-04

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Vishal Gupta, Sribhuvaneshwari H, Tanmaya Kumar Das, Saurabh Khandelwal, Shyam Akashe:
Innovative Circuit Level Methodology for FinFET based Low-Power 6T SRAM Cell Design. VDAT 2024: 1-5

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