"Comparisons of instability in device characteristics at high temperature ..."

Masanobu Kaneda, Kazuma Ariyoshi, Satoshi Matsumoto (2020)

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DOI: 10.1109/TENCON50793.2020.9293695

access: closed

type: Conference or Workshop Paper

metadata version: 2021-01-28

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Masanobu Kaneda, Kazuma Ariyoshi, Satoshi Matsumoto:
Comparisons of instability in device characteristics at high temperature for thin-film SOI power n- and p- channel MOSFETs. TENCON 2020: 134-139

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