


default search action
"Strained Ge Channels with High Hole Mobility Grown on Si Substrates by ..."
E. Sigle et al. (2021)
- E. Sigle

, David Weißhaupt, Michael Oehme, Hannes S. Funk, Daniel Schwarz
, Fritz Berkmann
, Jörg Schulze
:
Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy. MIPRO 2021: 40-44

manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.


Google
Google Scholar
Semantic Scholar
Internet Archive Scholar
CiteSeerX
ORCID












