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"30.6 A 64Gb DDR4 STT-MRAM Using a Time-Controlled Discharge-Reading Scheme ..."
Kosuke Hatsuda et al. (2025)
- Kosuke Hatsuda, Katsuhiko Hoya, Ryosuke Takizawa, Fumiyoshi Matsuoka, Takaya Yasuda, Akira Katayama, Tadashi Miyakawa, Kazuyo Senju, Kazuki Okawa, Yuka Furukawa, Yu Shimada, Katsuya Kotake, Sayaka Hirokawa, Min Chul Shin, Dong Keun Kim, Tae Ho Kim, Kyunghoon Kim, Hisanori Aikawa, Jeonghwan Song, Toshihiko Nagase, Soo Man Seo, Soo Gil Kim, Seonyong Cha:

30.6 A 64Gb DDR4 STT-MRAM Using a Time-Controlled Discharge-Reading Scheme for a .001681µm 1T-1MTJ Cross-Point Cell. ISSCC 2025: 1-3

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