"A unified FinFET reliability model including high K gate stack dynamic ..."

Chenyue Ma et al. (2009)

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DOI: 10.1109/ISQED.2009.4810262

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-01

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  - https://dblp.org/rec/conf/isqed/MaLZHZLC09
Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan:
A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. ISQED 2009: 7-12

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