"0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast ..."

E. Shen, J. B. Kuo (2002)

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DOI: 10.1109/ISCAS.2002.1010523

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-26

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E. Shen, J. B. Kuo:
0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast tag-compare capability using bulk PMOS dynamic-threshold (BP-DTMOS) technique based on standard CMOS technology for low-voltage VLSI systems. ISCAS (4) 2002: 583-586

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