"Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV ..."

Shengnan Zhu et al. (2021)

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DOI: 10.1109/IRPS46558.2021.9405230

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-05

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Shengnan Zhu, Tianshi Liu, Marvin H. White, Anant K. Agarwal, Arash Salemi, David Sheridan:
Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs. IRPS 2021: 1-7

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