"Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology."

M. Saliva et al. (2015)

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DOI: 10.1109/IRPS.2015.7112782

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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M. Saliva, Florian Cacho, Cheikh Ndiaye, Vincent Huard, D. Angot, Alain Bravaix, Lorena Anghel:
Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology. IRPS 2015: 4

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