"Degradation of vertical GaN FETs under gate and drain stress."

Maria Ruzzarin et al. (2018)

> Home

Details and statistics

DOI: 10.1109/IRPS.2018.8353579

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-07

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/RuzzarinMSMZSP18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/RuzzarinMSMZSP18
Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios:
Degradation of vertical GaN FETs under gate and drain stress. IRPS 2018: 4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.