"RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: ..."

Maurizio Millesimo et al. (2025)

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DOI: 10.1109/IRPS48204.2025.10982856

access: closed

type: Conference or Workshop Paper

metadata version: 2026-03-13

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Maurizio Millesimo, Lorenzo Valentini, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot:
RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. IRPS 2025: 1-7

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