"Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate ..."

Laiqiang Luo et al. (2020)

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DOI: 10.1109/IRPS45951.2020.9128911

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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Laiqiang Luo, Kalya Shubhakar, Sen Mei, Nagarajan Raghavan, Fan Zhang, Danny Shum, Kin Leong Pey:
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device. IRPS 2020: 1-6

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