"Characterization and Modeling of the Transient Safe Operating Area in ..."

Hang Li et al. (2019)

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DOI: 10.1109/IRPS.2019.8720462

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-29

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Hang Li, Kalpathy B. Sundaram, Yuanzhong Paul Zhou, Javier A. Salcedo, Jean-Jacques Hajjar:
Characterization and Modeling of the Transient Safe Operating Area in LDMOS Transistors. IRPS 2019: 1-5

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