"Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress."

Ajit Kanale et al. (2019)

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DOI: 10.1109/IRPS.2019.8720431

access: closed

type: Conference or Workshop Paper

metadata version: 2020-06-15

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Ajit Kanale, Kijeong Han, B. Jayant Baliga, Subhashish Bhattacharya:
Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress. IRPS 2019: 1-6

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