"Key parameters driving transistor degradation in advanced strained SiGe ..."

Vincent Huard et al. (2018)

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DOI: 10.1109/IRPS.2018.8353699

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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Vincent Huard, Cheikh Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix:
Key parameters driving transistor degradation in advanced strained SiGe channels. IRPS 2018: 4-1

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