"Towards Understanding the Physics of Gate Switching Instability in Silicon ..."

Maximilian W. Feil et al. (2023)

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DOI: 10.1109/IRPS48203.2023.10117740

access: closed

type: Conference or Workshop Paper

metadata version: 2025-12-25

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Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser:
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS 2023: 1-10

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