"High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of ..."

Davide Favero et al. (2023)

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DOI: 10.1109/IRPS48203.2023.10117667

access: closed

type: Conference or Workshop Paper

metadata version: 2025-11-20

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Davide Favero, Alberto Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS 2023: 1-6

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