"Reliability of Wafer-Level Ultra-Thinning down to 3 µm using 20 ..."

Zhwen Chen et al. (2021)

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DOI: 10.1109/IRPS46558.2021.9405125

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-05

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Zhwen Chen, Young-Suk Kim, Tadashi Fukuda, Koji Sakui, Takayuki Ohba, Tatsuji Kobayashi, Takashi Obara:
Reliability of Wafer-Level Ultra-Thinning down to 3 µm using 20 nm-Node DRAMs. IRPS 2021: 1-6

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