"Physical understanding of low frequency degradation of NMOS TDDB in High-k ..."

A. Bezza et al. (2015)

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DOI: 10.1109/IRPS.2015.7112740

access: closed

type: Conference or Workshop Paper

metadata version: 2022-01-03

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A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo:
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS 2015: 5

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