"VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs ..."

Besar Asllani et al. (2019)

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DOI: 10.1109/IRPS.2019.8720612

access: closed

type: Conference or Workshop Paper

metadata version: 2024-02-05

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Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson:
VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. IRPS 2019: 1-6

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