"Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs."

Thomas Aichinger, Matthias Schmidt (2020)

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DOI: 10.1109/IRPS45951.2020.9128223

access: closed

type: Conference or Workshop Paper

metadata version: 2021-01-20

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Thomas Aichinger, Matthias Schmidt:
Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs. IRPS 2020: 1-6

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