"Low write power and Field-free sub-ns write speed SOT-MRAM cell with ..."

T. V. A. Nguyen et al. (2025)

> Home

Details and statistics

DOI: 10.1109/IMW61990.2025.11026972

access: closed

type: Conference or Workshop Paper

metadata version: 2025-06-25

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/imw2/NguyenNHSTIE25
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/imw2/NguyenNHSTIE25
T. V. A. Nguyen, H. Naganuma, H. Honjo, Y. Sato, T. Tanigawa, S. Ikeda, T. Endoh:
Low write power and Field-free sub-ns write speed SOT-MRAM cell with Design Technology of Canted SOT structure and Magnetic Anisotropy for NVM. IMW 2025: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.