"Effect of oxygen pressure on the semiconductor properties of FTO thin films."

Ali Hamieh et al. (2017)

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DOI: 10.1109/ICM.2017.8268835

access: closed

type: Conference or Workshop Paper

metadata version: 2025-12-25

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Ali Hamieh, Jihad Hamieh, Ali Hamie, Ali Ghorayeb, Abdallah Zaiour, Bassam Assaf:
Effect of oxygen pressure on the semiconductor properties of FTO thin films. ICM 2017: 1-4

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