"ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length ..."

Tien-Yu Lan et al. (2020)

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DOI: 10.1109/ICKII50300.2020.9318923

access: closed

type: Conference or Workshop Paper

metadata version: 2021-02-02

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Tien-Yu Lan, Shen-Li Chen, Po-Lin Lin, Sheng-Kai Fan, Yu-Jie Zhou, Shi-Zhe Hong, Hung-Wei Chen:
ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient. ICKII 2020: 57-58

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