"A Method to Model the Volume Charge Density in a Multiple-Input ..."

Francisco Plascencia Jauregui et al. (2020)

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DOI: 10.1109/CCE50788.2020.9299156

access: closed

type: Conference or Workshop Paper

metadata version: 2025-02-27

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Francisco Plascencia Jauregui, Agustín Santiago Medina-Vázquez, Edwin C. Becerra-Alvarez, José M. Arce-Zavala, Sandra Flores Ruiz:
A Method to Model the Volume Charge Density in a Multiple-Input Floating-Gate MOS Transistor. CCE 2020: 1-6

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