"On the influence of strong magnetic field on MOS transistors."

Luc Hébrard et al. (2016)

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DOI: 10.1109/ICECS.2016.7841264

access: closed

type: Conference or Workshop Paper

metadata version: 2025-08-05

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  - conf/icecsys/HebrardNVSPDUP16
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Luc Hébrard, Duc Vinh Nguyen, Dorian Vogel, Jean-Baptiste Schell, Chrystelle Po, Norbert Dumas, Wilfried Uhring, Joris Pascal:
On the influence of strong magnetic field on MOS transistors. ICECS 2016: 564-567

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