"Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with ..."

Po-Lin Lin et al. (2020)

> Home

Details and statistics

DOI: 10.1109/ICCE-TAIWAN49838.2020.9258045

access: closed

type: Conference or Workshop Paper

metadata version: 2021-11-24

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/icce-tw/LinCFLZH20
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/icce-tw/LinCFLZH20
Po-Lin Lin, Shen-Li Chen, Sheng-Kai Fan, Tien-Yu Lan, Yu-Jie Zhou, Shi-Zhe Hong:
Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode. ICCE-TW 2020: 1-2

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.