"Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the ..."

Tien-Yu Lan et al. (2021)

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DOI: 10.1109/ICCE-TW52618.2021.9602930

access: closed

type: Conference or Workshop Paper

metadata version: 2021-11-23

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Tien-Yu Lan, Shen-Li Chen, Yu-Jie Zhou, Shi-Zhe Hong, Jhong-Yi Lai, Zhi-Wei Liu:
Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering. ICCE-TW 2021: 1-2

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