"Variation behavior of tunnel-FETs originated from dopant concentration at ..."

Shinji Migita et al. (2014)

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DOI: 10.1109/ESSDERC.2014.6948814

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-26

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Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota:
Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. ESSDERC 2014: 278-281

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