"High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs ..."

Abel Fontserè et al. (2012)

> Home

Details and statistics

DOI: 10.1109/ESSDERC.2012.6343394

access: closed

type: Conference or Workshop Paper

metadata version: 2019-10-19

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/essderc/FontserePGMPM12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/essderc/FontserePGMPM12
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens:
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. ESSDERC 2012: 306-309

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.