"Characterization and Modeling of BTI in SiC MOSFETs."

Davide Cornigli et al. (2019)

> Home

Details and statistics

DOI: 10.1109/ESSDERC.2019.8901761

access: closed

type: Conference or Workshop Paper

metadata version: 2024-08-04

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/essderc/CornigliTRFSSVC19
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/essderc/CornigliTRFSSVC19
Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi:
Characterization and Modeling of BTI in SiC MOSFETs. ESSDERC 2019: 82-85

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.