"Characterization of high-voltage charge-trapping effects in GaN-based ..."

Davide Bisi et al. (2014)

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DOI: 10.1109/ESSDERC.2014.6948842

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-07

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Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni:
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. ESSDERC 2014: 389-392

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