"All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs."

Hao Xue et al. (2018)

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DOI: 10.1109/DRC.2018.8442167

access: closed

type: Conference or Workshop Paper

metadata version: 2024-09-06

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Hao Xue, Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Sanyam Bajaj, Yuewei Zhang, Zane Jamal-Eddin, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu:
All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. DRC 2018: 1-2

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