"Enhanced Drain Current in Transient Mode due to Long Ionization Time of ..."

Tomohisa Miyao et al. (2022)

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DOI: 10.1109/DRC55272.2022.9855815

access: closed

type: Conference or Workshop Paper

metadata version: 2023-11-12

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Tomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, Ken Uchida:
Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors. DRC 2022: 1-2

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