"GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform ..."

Shisong Luo et al. (2024)

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DOI: 10.1109/DRC61706.2024.10605554

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Shisong Luo, Cheng Chang, Qingyun Xie, Tao Li, Mingfei Xu, Ziyi He, Tomás Palacios, Yuji Zhao:
GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C. DRC 2024: 1-2

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