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"Improved Electrical Characteristics of GaN-based HEMTs with Rationally ..."

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

Kun Liang, Haochen Zhang, Haiding Sun (2024)

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DOI: 10.1109/DRC61706.2024.10605491

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Kun Liang, Haochen Zhang, Haiding Sun:
Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes. DRC 2024: 1-2

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last updated on 2024-10-06 20:59 CEST by the dblp team

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