"Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN ..."

Dolar Khachariya et al. (2021)

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DOI: 10.1109/DRC52342.2021.9467186

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type: Conference or Workshop Paper

metadata version: 2024-10-06

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Dolar Khachariya, Seiji Mita, Pramod Reddy, Saroj Dangi, Pegah Bagheri, M. Hayden Breckenridge, Rohan Sengupta, Erhard Kohn, Zlatko Sitar, Ramon Collazo, Spyridon Pavlidis:
Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields. DRC 2021: 1-2

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